cystech electronics corp. spec. no. : c566q8 issued date : 2012.06.12 revised date : page no. : 1/8 MTP2402Q8 cystek product specification p-channel enhancement mode power mosfet MTP2402Q8 bv dss -20v i d -8.3a r dson @v gs =-10v, i d =-7a 22m (typ) r dson @v gs =-4.5v,i d =-4.5a 27m (typ) r dson @v gs =-2.5v,i d =-2a 35m (typ) description the MTP2402Q8 is a p-channel enhancement-mode mosfet, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. the sop-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as dc/dc converters. features ? simple drive requirement ? low on-resistance ? fast switching speed ? pb-free lead plating package equivalent circuit outline ordering information device package shipping marking MTP2402Q8 sop-8 (pb-free lead plating package) 2500 pcs/ tape & reel 2402 MTP2402Q8 sop-8 g gate s source d drain
cystech electronics corp. spec. no. : c566q8 issued date : 2012.06.12 revised date : page no. : 2/8 MTP2402Q8 cystek product specification absolute maximum ratings (ta=25 c) parameter symbol limits unit drain-source breakdown voltage bv dss -20 gate-source voltage v gs 12 v t a =25 c, v gs =-4.5v -8.3 continuous drain current (note 1) t a =70 c, v gs =-4.5v i d -6.6 pulsed drain current (note 2) i dm -30 a t a =25 c 3.1 total power dissipation (note 1) t a =70 c p d 2 w operating junction and storage temperature range tj ; tstg -55~+150 c thermal resistance, junction-to-ambient (note 1) rth,j-a 40 c/w note : 1.surface mounted on fr-4 board, t 10sec; 125 c/w when mounted on minimum copper pad. the value in any given application depe nds on the user?s specific board design. 2. pulse width 300 s, duty cycle 2% electrical characteristics (tj=25 c, unless otherwise specified) symbol min. typ. max. unit test conditions static bv dss -20 - - v v gs =0, i d =-250 a v gs(th) -0.5 -0.7 -1.0 v v ds =v gs , i d =-250 a i gss - - 100 na v gs =12v, v ds =0 - - -1 v ds =-16v, v gs =0 i dss - - -25 a v ds =-16v, v gs =0, tj=125 c - 22 30 v gs =-10v, i d =-7a - 27 35 v gs =-4.5v, i d =-4.5a *r ds(on) - 35 50 m v gs =-2.5v, i d =-2a *g fs - 13 - s v ds =-10v, i d =-7a dynamic ciss - 1916 - coss - 159 - crss - 132 - pf v ds =-10v, v gs =0, f=1mhz *t d(on) - 11 - *t r - 15 - *t d(off) - 44 - *t f - 18 - ns v dd =-10v, i d =-2a, v gs =-10v, r g =3.3 *qg - 15 - *qgs - 3 - *qgd - 6.3 - nc v ds =-16v, v gs =-4.5v, i d =-7a source drain diode *i s - - -2 *i sm - - -8 a *v sd - -0.76 -1.2 v v gs =0v, i s =-2a *trr - 22 - ns *qrr - 20 - nc i f =7a, di f /dt=100a/ s *pulse test : pulse width 300 s, duty cycle 2%
cystech electronics corp. spec. no. : c566q8 issued date : 2012.06.12 revised date : page no. : 3/8 MTP2402Q8 cystek product specification typical characteristics typical output characteristics 0 5 10 15 20 25 30 012345 -v ds , drain-source voltage(v) -i d , drain current (a) 5v, 4.5v, 4v, 3.5v, 3v - v gs = 1. 5v -v gs =2v -v gs =1v -v gs =2.5v brekdown voltage vs ambient temperature 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) -bv dss , normalized drain-source breakdown voltage i d =-250 a, v gs =0v static drain-source on-state resistance vs drain current 10 100 1000 0.01 0.1 1 10 100 -i d , drain current(a) r ds(on) , static drain-source on-state resistance(m) -v gs =1.5v -v gs =4.5v -v gs =2.5v -v gs =1.8v reverse drain current vs source-drain voltage 0.2 0.4 0.6 0.8 1 1.2 04812162 -i dr , reverse drain current (a) -v sd , source-drain voltage(v) 0 tj=25c tj=150c v gs =0v static drain-source on-state resistance vs gate-source voltage 0 40 80 120 160 200 240 280 320 360 400 012345 -v gs , gate-source voltage(v) r ds( on) , static drain-source on- state resistance(m) i d =-4.5a drain-source on-state resistance vs junction tempearture 0.6 0.8 1 1.2 1.4 1.6 -60 -20 20 60 100 140 180 tj, junction temperature(c) r ds( on) , normalized static drain- source on-state resistance v gs =-4.5v, i d =-4.5a r dson @tj=25c : 27m typ
cystech electronics corp. spec. no. : c566q8 issued date : 2012.06.12 revised date : page no. : 4/8 MTP2402Q8 cystek product specification typical characteristics(cont.) capacitance vs drain-to-source voltage 10 100 1000 10000 0.1 1 10 100 -v ds , drain-source voltage(v) capacitance---(pf) c oss ciss crss threshold voltage vs junction tempearture 0.4 0.6 0.8 1 1.2 1.4 1.6 -60 -40 -20 0 20 40 60 80 100 120 140 160 tj, junction temperature(c) -v gs( th) , normalized threshold voltage i d =-250 a i d =-1ma single pulse power rating, junction to ambient (note on page 2) 0 10 20 30 40 50 0.01 0.1 1 10 100 1000 pulse width(s) power (w) t j( max) =150c t a =25c r ja =40c/w gate charge characteristics 0 2 4 6 8 10 0 5 10 15 20 25 30 qg, total gate charge(nc) -v gs , gate-source voltage(v) v ds =-16v i d =-7a maximum safe operating area 0.01 0.1 1 10 100 0.01 0.1 1 10 100 -v ds , drain-source voltage(v) -i d , drain current (a) dc 10ms 100m 1ms 100 s t a =25c, tj=150c, v gs =-4.5v, r ja =40c/w single pulse 1s maximum drain current vs junctiontemperature 0 1 2 3 4 5 6 7 8 9 10 25 50 75 100 125 150 175 tj, junction temperature(c) -i d , maximum drain current(a) t a =25c, v gs =-4.5v, ja =40c/w
cystech electronics corp. spec. no. : c566q8 issued date : 2012.06.12 revised date : page no. : 5/8 MTP2402Q8 cystek product specification typical characteristics(cont.) typical transfer characteristics 0 10 20 30 40 50 60 70 012345 -v gs , gate-source voltage(v) -i d , drain current (a) -v ds =5v forward transfer admittance vs drain current 0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 -i d , drain current(a) g fs , forward transfer admittance(s) ta=25c pulsed v ds =-5v transient thermal response curves 0.001 0.01 0.1 1 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 1.e+02 1.e+03 t 1 , square wave pulse duration(s) r(t), normalized effective transient thermal resistance single pulse 0.01 0.02 0.05 0.1 0.2 d=0.5 1.r ja (t)=r(t)*r ja 2.duty factor, d=t 1 /t 2 3.t jm -t a =p dm *r ja (t) 4.r ja =40c/w
cystech electronics corp. spec. no. : c566q8 issued date : 2012.06.12 revised date : page no. : 6/8 MTP2402Q8 cystek product specification reel dimension carrier tape dimension
cystech electronics corp. spec. no. : c566q8 issued date : 2012.06.12 revised date : page no. : 7/8 MTP2402Q8 cystek product specification recommended wave soldering condition product peak temperature soldering time pb-free devices 260 +0/-5 c 5 +1/-1 seconds recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds time maintained above: ? temperature (t l ) ? time (t l ) 183 c 60-150 seconds 217 c 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak temperature(tp) 10-30 seconds 20-40 seconds ramp down rate 6 c/second max. 6c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of the package, measured on the package body surface.
cystech electronics corp. spec. no. : c566q8 issued date : 2012.06.12 revised date : page no. : 8/8 MTP2402Q8 cystek product specification sop-8 dimension millimeters inches millimeters inches dim min. max. min. max. dim min. max. min. max. a 1.350 1.750 0.053 0.069 e 3.800 4.000 0.150 0.157 a1 0.100 0.250 0.004 0.010 e1 5.800 6.200 0.228 0.244 a2 1.350 1.550 0.053 0.061 e 1.270 (bsc) 0.050 (bsc) b 0.330 0.510 0.013 0.020 l 0.400 1.270 0.016 0.050 c 0.170 0.250 0.006 0.010 0 8 0 8 d 4.700 5.100 0.185 0.200 notes: 1.controlling dimension: millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing spec ification or packing method, please cont act your local cystek sales office. material: ? lead: pure tin plated. ? mold compound: epoxy resin family, flammability solid burning class: ul94v-0. important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitab le for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance . marking: 8-lead sop-8 plastic package cystek packa g e code: q8 date code 2402 device name
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